Comparison of GAN, SIC, SI Technology for High Frequency and High Efficiency Inverters

High Performance GaN HEMTs on 3-inch SI-SiC Substrates

Gallium Nitride (GaN) HEMTs are the focus of intense research and development due to their potential for the realization of MMIC power amplifiers (PAs) with high gain and record levels of power delivery [1]. Much of the work in GaN HEMT development has been concentrated on performance demonstration on 2” SiC and Sapphire substrates. Multiple groups have demonstrated GaN HEMTs delivering record ...

GaN transistors on Si for switching and high-frequency applications

High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applications

Article history: Received 27 May 2015 Accepted 9 June 2015 Available online xxxx

Power Frequency Inverters for High Voltage Tests

The essential demand in high AC voltage testing is the availability of a test voltage with high quality, which is variable in amplitude and frequency. The power supply should not have any influence on the measurements – even the PDmeasurement and should be able to control a fault of the test objects insulation safely. These demands can be fulfilled using modern IGBT inverters. Two level voltage...

Design and Comparison of Si-based and SiC-based Three-Phase PV Inverters